NSBC144EDXV6T5G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Collector Emitter Voltage (VCEO) :

50V

Power Dissipation :

357mW

Min Operating Temperature :

-55°C

Max Collector Current :

100mA

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Pin Count :

6

Factory Lead Time :

2 Weeks

Radiation Hardening :

No

Terminal Form :

Flat

Current Rating :

100mA

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Breakdown Voltage :

50V

Max Power Dissipation :

500mW

Current - Collector Cutoff (Max) :

500nA

Terminal Finish :

Tin (Sn)

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Pbfree Code :

yes

Mounting Type :

Surface Mount

Transistor Type :

2 NPN - Pre-Biased (Dual)

Peak Reflow Temperature (Cel) :

260

Continuous Collector Current :

100mA

Resistor - Emitter Base (R2) :

47k Ω

Resistor - Base (R1) :

47k Ω

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Number of Pins :

6

Number of Terminations :

6

ECCN Code :

EAR99

Published :

2006

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Number of Elements :

2

hFE Min :

80

Package / Case :

SOT-563, SOT-666

Max Operating Temperature :

150°C

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Polarity :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

50V

Element Configuration :

Dual

Max Breakdown Voltage :

50V

Base Part Number :

NSBC1*