NSBC143ZDXV6T1G

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Mfr.Part #
NSBC143ZDXV6T1G
Manufacturer
onsemi
Package / Case
SOT-563, SOT-666
Datasheet
Download
Description
TRANS PREBIAS 2NPN 50V SOT563
Stock
8,915
In Stock :
8,915

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Pin Count :
6
Additional Feature :
BUILT IN BIAS RESISTOR RATIO 10
Transistor Type :
2 NPN - Pre-Biased (Dual)
Collector Emitter Breakdown Voltage :
50V
Vce Saturation (Max) @ Ib, Ic :
250mV @ 1mA, 10mA
Current Rating :
100mA
Time@Peak Reflow Temperature-Max (s) :
40
Width :
1.2mm
Max Breakdown Voltage :
50V
Polarity :
NPN
Max Operating Temperature :
150°C
RoHS Status :
ROHS3 Compliant
Published :
2006
Factory Lead Time :
2 Weeks
Max Power Dissipation :
500mW
JESD-609 Code :
e3
DC Current Gain (hFE) (Min) @ Ic, Vce :
80 @ 5mA 10V
Radiation Hardening :
No
hFE Min :
80
Packaging :
Tape and Reel (TR)
Voltage - Rated DC :
50V
Height :
550μm
Element Configuration :
Dual
Mounting Type :
Surface Mount
Number of Terminations :
6
Length :
1.6mm
Terminal Finish :
Tin (Sn)
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Transistor Application :
SWITCHING
Resistor - Emitter Base (R2) :
47k Ω
Min Operating Temperature :
-55°C
Max Collector Current :
100mA
Number of Pins :
6
Surface Mount :
yes
Pbfree Code :
yes
Number of Elements :
2
Current - Collector Cutoff (Max) :
500nA
Package / Case :
SOT-563, SOT-666
Peak Reflow Temperature (Cel) :
260
Terminal Form :
Flat
Base Part Number :
NSBC1*
Continuous Collector Current :
100mA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Voltage (VCEO) :
50V
Lead Free :
Lead Free
Resistor - Base (R1) :
4.7k Ω
ECCN Code :
EAR99
Weight :
8.193012mg
Datasheets
NSBC143ZDXV6T1G
Introducing Transistors - Bipolar (BJT) - Arrays, Pre-Biased onsemi NSBC143ZDXV6T1G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Terminations:6, Number of Pins:6, Package / Case:SOT-563, SOT-666, Base Part Number:NSBC1*, NSBC143ZDXV6T1G pinout, NSBC143ZDXV6T1G datasheet PDF, NSBC143ZDXV6T1G amp .Beyond Transistors - Bipolar (BJT) - Arrays, Pre-Biased onsemi NSBC143ZDXV6T1G ,we also offer PUMD2,125, PUMD2,115, PUMD2,165, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NSBC143ZDXV6T1G


NSBC143ZDXV6T1G datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from ON Semiconductor stock available at

The ON Semiconductor NSBC143ZDXV6T1G is a pre-biased, two-NPN transistor array in a SOT563 package. It is designed for use in low-power applications such as portable electronics, consumer electronics, and automotive applications. The device features a low collector-emitter saturation voltage of 0.5V and a low collector-emitter leakage current of 0.1uA. It also has a high gain bandwidth product of 1.2GHz and a high current gain of 200. The device is RoHS compliant and is suitable for use in a wide range of applications.

Features of the ON Semiconductor NSBC143ZDXV6T1G include:

• Low collector-emitter saturation voltage of 0.5V
• Low collector-emitter leakage current of 0.1uA
• High gain bandwidth product of 1.2GHz
• High current gain of 200
• RoHS compliant
• Suitable for use in a wide range of applications

Applications of the ON Semiconductor NSBC143ZDXV6T1G include:

• Portable electronics
• Consumer electronics
• Automotive applications
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