NSBC143TPDXV6T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Max Breakdown Voltage :

50V

Element Configuration :

Dual

Radiation Hardening :

No

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Power Dissipation :

357mW

Peak Reflow Temperature (Cel) :

260

Resistor - Base (R1) :

4.7k Ω

Transistor Application :

SWITCHING

Max Collector Current :

100mA

JESD-609 Code :

e3

Base Part Number :

NSBC1*

Number of Pins :

6

Published :

2010

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

6

Additional Feature :

BUILT IN BIAS RESISTOR

Terminal Finish :

Tin (Sn)

Surface Mount :

yes

Voltage - Rated DC :

50V

Lead Free :

Lead Free

Current - Collector Cutoff (Max) :

500nA

Number of Elements :

2

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Number of Terminations :

6

Package / Case :

SOT-563, SOT-666

Max Operating Temperature :

150°C

Factory Lead Time :

17 Weeks

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Min Operating Temperature :

-55°C

Terminal Form :

Flat

Polarity :

NPN, PNP

hFE Min :

160

Packaging :

Tape and Reel (TR)

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 5mA 10V

Collector Emitter Voltage (VCEO) :

50V

Max Power Dissipation :

500mW

Current Rating :

100mA

Continuous Collector Current :

100mA

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)