NSBC143EPDP6T5G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Collector Emitter Voltage (VCEO) :

50V

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Packaging :

Tape and Reel (TR)

Power Dissipation :

231mW

JESD-609 Code :

e3

Max Operating Temperature :

150°C

hFE Min :

15

Factory Lead Time :

8 Weeks

Pbfree Code :

yes

Package / Case :

SOT-963

Collector Emitter Breakdown Voltage :

50V

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 1.0

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Pin Count :

6

RoHS Status :

ROHS3 Compliant

Continuous Collector Current :

100mA

Max Collector Current :

100mA

Min Operating Temperature :

-55°C

Current - Collector Cutoff (Max) :

500nA

Radiation Hardening :

No

Terminal Form :

Flat

Polarity/Channel Type :

NPN AND PNP

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 5mA 10V

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

339mW

Element Configuration :

Single

Terminal Finish :

Tin (Sn)

REACH SVHC :

No SVHC

Surface Mount :

yes

Published :

2012

ECCN Code :

EAR99

Resistor - Base (R1) :

4.7k Ω

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Number of Pins :

6

Number of Terminations :

6

Resistor - Emitter Base (R2) :

4.7k Ω