NSBC124XPDXV6T5G
- Mfr.Part #
- NSBC124XPDXV6T5G
- Manufacturer
- onsemi
- Package / Case
- SOT-563, SOT-666
- Datasheet
- Download
- Description
- TRANS PREBIAS NPN/PNP SOT563
- Stock
- 1,443
- In Stock :
- 1,443
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- Transistor Application :
- SWITCHING
- Current Rating :
- 100mA
- Number of Terminations :
- 6
- Collector Emitter Voltage (VCEO) :
- 250mV
- Lead Free :
- Lead Free
- Resistor - Base (R1) :
- 22k Ω
- Transistor Element Material :
- SILICON
- Base Part Number :
- NSBC1*
- Voltage - Rated DC :
- 50V
- Operating Temperature (Max) :
- 150°C
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 1mA, 10mA
- Mounting Type :
- Surface Mount
- Terminal Finish :
- Tin (Sn)
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Pin Count :
- 6
- Configuration :
- SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 5mA 10V
- Additional Feature :
- BUILT IN BIAS RESISTOR RATIO IS 2.14
- Max Collector Current :
- 100mA
- Current - Collector Cutoff (Max) :
- 500nA
- Resistor - Emitter Base (R2) :
- 47k Ω
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-30 Code :
- R-PDSO-F6
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN AND PNP
- RoHS Status :
- RoHS Compliant
- Collector Emitter Breakdown Voltage :
- 50V
- Terminal Form :
- Flat
- Package / Case :
- SOT-563, SOT-666
- Transistor Type :
- 1 NPN, 1 PNP - Pre-Biased (Dual)
- Max Power Dissipation :
- 500mW
- Number of Elements :
- 2
- Qualification Status :
- Not Qualified
- Published :
- 2008
- JESD-609 Code :
- e3
- Datasheets
- NSBC124XPDXV6T5G

NSBC124XPDXV6T5G datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from ON Semiconductor stock available at
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