NSBC124EPDXV6T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Number of Pins :

6

Package / Case :

SOT-563, SOT-666

Packaging :

Tape and Reel (TR)

Max Breakdown Voltage :

50V

Peak Reflow Temperature (Cel) :

260

Current - Collector Cutoff (Max) :

500nA

Voltage - Rated DC :

50V

Resistor - Emitter Base (R2) :

22k Ω

Polarity :

NPN, PNP

Max Collector Current :

100mA

Collector Emitter Breakdown Voltage :

50V

Collector Emitter Voltage (VCEO) :

50V

Max Power Dissipation :

500mW

Factory Lead Time :

2 Weeks

Resistor - Base (R1) :

22k Ω

Number of Elements :

2

Mounting Type :

Surface Mount

Current Rating :

100mA

Published :

2008

Pin Count :

6

Surface Mount :

yes

Terminal Finish :

Tin (Sn)

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 10V

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Min Operating Temperature :

-55°C

Terminal Form :

Flat

Pbfree Code :

yes

hFE Min :

60

Continuous Collector Current :

100mA

Base Part Number :

NSBC1*

Power Dissipation :

357mW

Lead Free :

Lead Free

Max Operating Temperature :

150°C

Number of Terminations :

6

Transistor Application :

SWITCHING

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Dual

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA