NSBC123JPDXV6T5G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

hFE Min :

80

Terminal Form :

Flat

Voltage - Rated DC :

50V

Pbfree Code :

yes

Number of Elements :

2

Max Operating Temperature :

150°C

Width :

1.2mm

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Polarity :

NPN, PNP

Max Power Dissipation :

500mW

Length :

1.6mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Surface Mount :

yes

Number of Pins :

6

Terminal Finish :

Tin (Sn)

Weight :

8.193012mg

Pin Count :

6

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

500nA

RoHS Status :

ROHS3 Compliant

Max Breakdown Voltage :

50V

Number of Terminations :

6

Resistor - Emitter Base (R2) :

47k Ω

Max Collector Current :

100mA

Continuous Collector Current :

100mA

Published :

2008

Resistor - Base (R1) :

2.2k Ω

Min Operating Temperature :

-55°C

Lead Free :

Lead Free

Collector Emitter Voltage (VCEO) :

50V

Collector Emitter Breakdown Voltage :

50V

Radiation Hardening :

No

Height :

550μm

Factory Lead Time :

17 Weeks

ECCN Code :

EAR99

Base Part Number :

NSBC1*

Current Rating :

100mA

JESD-609 Code :

e3

Element Configuration :

Dual

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

SOT-563, SOT-666