NSBC123JDXV6T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

hFE Min :

80

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Min Operating Temperature :

-55°C

RoHS Status :

ROHS3 Compliant

Max Breakdown Voltage :

50V

ECCN Code :

EAR99

Package / Case :

SOT-563, SOT-666

Terminal Form :

Flat

Collector Emitter Breakdown Voltage :

50V

Power Dissipation :

357mW

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Max Operating Temperature :

150°C

Max Power Dissipation :

500mW

Resistor - Emitter Base (R2) :

47k Ω

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Published :

2012

Base Part Number :

NSBC1*

Collector Emitter Voltage (VCEO) :

250mV

Max Collector Current :

100mA

Qualification Status :

Not Qualified

Continuous Collector Current :

100mA

Number of Elements :

2

Lead Free :

Lead Free

Factory Lead Time :

2 Weeks

JESD-609 Code :

e3

Number of Terminations :

6

Polarity :

NPN

Current Rating :

100mA

Surface Mount :

yes

Current - Collector Cutoff (Max) :

500nA

Number of Pins :

6

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Resistor - Base (R1) :

2.2k Ω

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Element Configuration :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

2 NPN - Pre-Biased (Dual)

Terminal Finish :

Tin (Sn)

Pin Count :

6

Voltage - Rated DC :

50V