NSBC114YPDXV6T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Current Rating :

100mA

Continuous Collector Current :

100mA

Time@Peak Reflow Temperature-Max (s) :

40

Resistor - Emitter Base (R2) :

47k Ω

Max Breakdown Voltage :

50V

Resistor - Base (R1) :

10k Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

50V

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

2 Weeks

Number of Elements :

2

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Power Dissipation :

357mW

Polarity :

NPN, PNP

hFE Min :

80

Max Operating Temperature :

150°C

Lead Free :

Lead Free

Current - Collector Cutoff (Max) :

500nA

Surface Mount :

yes

Max Power Dissipation :

500mW

Mounting Type :

Surface Mount

Pin Count :

6

Max Collector Current :

100mA

Pbfree Code :

yes

Base Part Number :

NSBC1*

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Element Configuration :

Dual

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Terminal Form :

Flat

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

REACH SVHC :

No SVHC

Number of Terminations :

6

Voltage - Rated DC :

50V

Published :

2003

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 4.7

Terminal Finish :

Tin (Sn)

Number of Pins :

6

Min Operating Temperature :

-55°C

Collector Emitter Breakdown Voltage :

50V

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Package / Case :

SOT-563, SOT-666