NSBC114YDXV6T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Max Operating Temperature :

150°C

Current - Collector Cutoff (Max) :

500nA

Transistor Type :

2 NPN - Pre-Biased (Dual)

hFE Min :

80

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Number of Pins :

6

Collector Emitter Breakdown Voltage :

50V

Package / Case :

SOT-563, SOT-666

Transistor Application :

SWITCHING

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 4.7

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Base Part Number :

NSBC1*

ECCN Code :

EAR99

Number of Elements :

2

JESD-609 Code :

e3

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Max Collector Current :

100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Pin Count :

6

Number of Terminations :

6

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation :

357mW

Peak Reflow Temperature (Cel) :

260

Max Breakdown Voltage :

50V

Max Power Dissipation :

500mW

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Flat

Resistor - Base (R1) :

10k Ω

Voltage - Rated DC :

50V

Published :

2006

Pbfree Code :

yes

Continuous Collector Current :

100mA

Current Rating :

100mA

Surface Mount :

yes

Element Configuration :

Dual

Contact Plating :

Tin

Collector Emitter Voltage (VCEO) :

50V

Resistor - Emitter Base (R2) :

47k Ω

Polarity :

NPN

Min Operating Temperature :

-55°C

Factory Lead Time :

2 Weeks

RoHS Status :

ROHS3 Compliant