NSBC114YDP6T5G
- Mfr.Part #
- NSBC114YDP6T5G
- Manufacturer
- onsemi
- Package / Case
- SOT-963
- Datasheet
- Download
- Description
- TRANS PREBIAS 2NPN 50V SOT963
- Stock
- 4,317
- In Stock :
- 4,317
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- Pbfree Code :
- yes
- Transistor Type :
- 2 NPN - Pre-Biased (Dual)
- Transistor Application :
- SWITCHING
- Package / Case :
- SOT-963
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Mounting Type :
- Surface Mount
- hFE Min :
- 80
- Resistor - Base (R1) :
- 10k Ω
- Terminal Finish :
- Tin (Sn)
- ECCN Code :
- EAR99
- Pin Count :
- 6
- Number of Pins :
- 6
- Polarity :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 2
- Max Power Dissipation :
- 339mW
- Max Collector Current :
- 100mA
- Additional Feature :
- BUILT IN BIAS RESISTOR RATIO IS 4.7
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Resistor - Emitter Base (R2) :
- 47k Ω
- Element Configuration :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- yes
- Factory Lead Time :
- 8 Weeks
- Number of Terminations :
- 6
- Min Operating Temperature :
- -55°C
- Max Operating Temperature :
- 150°C
- Terminal Form :
- Flat
- Collector Emitter Breakdown Voltage :
- 50V
- Current - Collector Cutoff (Max) :
- 500nA
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 300μA, 10mA
- Radiation Hardening :
- No
- Published :
- 2010
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 5mA 10V
- Base Part Number :
- NSBC1*
- Collector Emitter Voltage (VCEO) :
- 50V
- JESD-609 Code :
- e3
- Datasheets
- NSBC114YDP6T5G

NSBC114YDP6T5G datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from ON Semiconductor stock available at
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