NSBC114TDXV6T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 5mA 10V

Current Rating :

100mA

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Polarity :

NPN

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

50V

Collector Emitter Breakdown Voltage :

50V

Transistor Type :

2 NPN - Pre-Biased (Dual)

Base Part Number :

NSBC1*

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Min Operating Temperature :

-55°C

Continuous Collector Current :

100mA

Number of Terminations :

6

Number of Elements :

2

Current - Collector Cutoff (Max) :

500nA

Max Breakdown Voltage :

50V

Terminal Form :

Flat

Element Configuration :

Dual

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Collector Emitter Voltage (VCEO) :

50V

Power Dissipation :

357mW

Package / Case :

SOT-563, SOT-666

Radiation Hardening :

No

Resistor - Base (R1) :

10k Ω

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Max Collector Current :

100mA

Lead Free :

Lead Free

hFE Min :

160

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Mounting Type :

Surface Mount

Additional Feature :

BUILT IN BIAS RESISTOR

Pbfree Code :

yes

Number of Pins :

6

Max Power Dissipation :

500mW

JESD-609 Code :

e3

Factory Lead Time :

2 Weeks

Published :

2006

Pin Count :

6

Max Operating Temperature :

150°C