NSBC114TDXV6T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Number of Pins :

6

hFE Min :

160

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

2

Additional Feature :

BUILT IN BIAS RESISTOR

Factory Lead Time :

2 Weeks

Lead Free :

Lead Free

Current - Collector Cutoff (Max) :

500nA

Resistor - Base (R1) :

10k Ω

Pin Count :

6

Number of Terminations :

6

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 5mA 10V

Collector Emitter Breakdown Voltage :

50V

Power Dissipation :

357mW

Max Power Dissipation :

500mW

Transistor Type :

2 NPN - Pre-Biased (Dual)

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Terminal Form :

Flat

Voltage - Rated DC :

50V

Min Operating Temperature :

-55°C

ECCN Code :

EAR99

Base Part Number :

NSBC1*

Polarity :

NPN

Max Breakdown Voltage :

50V

Terminal Finish :

Tin (Sn)

Current Rating :

100mA

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Radiation Hardening :

No

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Mounting Type :

Surface Mount

Pbfree Code :

yes

Continuous Collector Current :

100mA

Max Collector Current :

100mA

Max Operating Temperature :

150°C

Collector Emitter Voltage (VCEO) :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Element Configuration :

Dual

Package / Case :

SOT-563, SOT-666

Published :

2006