NSBC114EPDXV6T5G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Mounting Type :

Surface Mount

Power Dissipation :

357mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Package / Case :

SOT-563, SOT-666

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

500mW

RoHS Status :

ROHS3 Compliant

Qualification Status :

Not Qualified

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Current - Collector Cutoff (Max) :

500nA

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Surface Mount :

yes

Max Collector Current :

100mA

ECCN Code :

EAR99

Base Part Number :

NSBC1*

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Number of Terminations :

6

Max Operating Temperature :

150°C

Polarity :

NPN, PNP

Element Configuration :

Dual

Pbfree Code :

yes

Published :

2010

Number of Pins :

6

hFE Min :

35

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Voltage - Rated DC :

50V

Pin Count :

6

JESD-609 Code :

e3

Factory Lead Time :

17 Weeks

Continuous Collector Current :

100mA

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

Terminal Form :

Flat

Lead Free :

Lead Free

Collector Emitter Breakdown Voltage :

50V

Resistor - Emitter Base (R2) :

10k Ω

Resistor - Base (R1) :

10k Ω

Min Operating Temperature :

-55°C

Current Rating :

100mA

Collector Emitter Voltage (VCEO) :

50V