NSBA144WDXV6T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Transistor Type :

2 PNP - Pre-Biased (Dual)

Polarity :

PNP

Package / Case :

SOT-563, SOT-666

Surface Mount :

yes

Qualification Status :

Not Qualified

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Factory Lead Time :

17 Weeks

hFE Min :

80

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 2.1

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Collector Cutoff (Max) :

500nA

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

250mV

Resistor - Base (R1) :

47k Ω

Max Power Dissipation :

500mW

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Published :

2012

JESD-609 Code :

e3

Power - Max :

500mW

Terminal Form :

Flat

Resistor - Emitter Base (R2) :

22k Ω

Number of Elements :

2

Number of Pins :

6

Collector Emitter Breakdown Voltage :

50V

Max Collector Current :

100mA

Lead Free :

Lead Free

Pin Count :

6

Number of Terminations :

6

Terminal Finish :

Tin (Sn)