NSBA114EDXV6T5

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Current Rating :

-100mA

Continuous Collector Current :

-100mA

Published :

2006

Packaging :

Tape and Reel (TR)

Number of Elements :

2

Current - Collector Cutoff (Max) :

500nA

Power Dissipation :

357mW

hFE Min :

35

RoHS Status :

Non-RoHS Compliant

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Mount :

Surface Mount

Mounting Type :

Surface Mount

Min Operating Temperature :

-55°C

Pin Count :

6

Element Configuration :

Dual

Max Operating Temperature :

150°C

Max Collector Current :

100mA

JESD-30 Code :

R-PDSO-F6

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

2 PNP - Pre-Biased (Dual)

JESD-609 Code :

e3

Voltage - Rated DC :

-50V

Package / Case :

SOT-563, SOT-666

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Finish :

Tin (Sn)

Resistor - Base (R1) :

10k Ω

Lead Free :

Contains Lead

Resistor - Emitter Base (R2) :

10k Ω

Number of Terminations :

6

Terminal Form :

Flat

Peak Reflow Temperature (Cel) :

260

Max Power Dissipation :

500mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Base Part Number :

NSBA1*

Collector Emitter Voltage (VCEO) :

250mV

Transistor Application :

SWITCHING

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Collector Emitter Breakdown Voltage :

50V

Polarity :

PNP

ECCN Code :

EAR99