NSBA114TDXV6T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Mount :

Surface Mount

Number of Elements :

2

Transistor Type :

2 PNP - Pre-Biased (Dual)

Number of Terminations :

6

Package / Case :

SOT-563, SOT-666

Collector Emitter Voltage (VCEO) :

250mV

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Max Breakdown Voltage :

50V

Qualification Status :

Not Qualified

Max Power Dissipation :

500mW

Element Configuration :

Dual

Continuous Collector Current :

-100mA

Current - Collector Cutoff (Max) :

500nA

Additional Feature :

BUILT IN BIAS RESISTOR

JESD-609 Code :

e3

Max Operating Temperature :

150°C

Time@Peak Reflow Temperature-Max (s) :

40

Polarity :

PNP

Peak Reflow Temperature (Cel) :

260

Pin Count :

6

Resistor - Base (R1) :

10k Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Terminal Finish :

Tin (Sn)

Collector Emitter Breakdown Voltage :

50V

Min Operating Temperature :

-55°C

Lead Free :

Contains Lead

Transistor Application :

SWITCHING

Current Rating :

-100mA

Max Collector Current :

100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 5mA 10V

JESD-30 Code :

R-PDSO-F6

RoHS Status :

Non-RoHS Compliant

Published :

2009

hFE Min :

160

Voltage - Rated DC :

-50V

Base Part Number :

NSBA1*

Power Dissipation :

357mW

Terminal Form :

Flat