NSBA113EDXV6T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

ECCN Code :

EAR99

Element Configuration :

Dual

Weight :

8.193012mg

Min Operating Temperature :

-55°C

Factory Lead Time :

17 Weeks

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

hFE Min :

3

Width :

1.2mm

Number of Terminations :

6

Packaging :

Tape and Reel (TR)

Resistor - Emitter Base (R2) :

1k Ω

Pbfree Code :

yes

Terminal Form :

Flat

Collector Emitter Voltage (VCEO) :

250mV

JESD-609 Code :

e3

Polarity :

PNP

Mounting Type :

Surface Mount

Max Operating Temperature :

150°C

Current - Collector Cutoff (Max) :

500nA

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Qualification Status :

Not Qualified

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Max Collector Current :

100mA

Published :

2012

Surface Mount :

yes

Number of Elements :

2

Resistor - Base (R1) :

1k Ω

Continuous Collector Current :

-100mA

Length :

1.6mm

Lead Free :

Lead Free

Height :

550μm

Collector Emitter Breakdown Voltage :

50V

Pin Count :

6

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DC Current Gain (hFE) (Min) @ Ic, Vce :

3 @ 5mA 10V

Number of Pins :

6

Transistor Type :

2 PNP - Pre-Biased (Dual)

Max Power Dissipation :

250mW

Package / Case :

6-TSSOP, SC-88, SOT-363

RoHS Status :

ROHS3 Compliant