NSBA113EF3T5G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

DC Current Gain (hFE) (Min) @ Ic, Vce :

3 @ 5mA 10V

Resistor - Base (R1) :

1 k Ω

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Polarity :

PNP

JESD-609 Code :

e3

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA

Pbfree Code :

yes

Pin Count :

3

Mounting Type :

Surface Mount

Number of Pins :

3

Transistor Application :

SWITCHING

Collector Emitter Breakdown Voltage :

50V

Package / Case :

SOT-1123

Collector Emitter Voltage (VCEO) :

250mV

Resistor - Emitter Base (R2) :

1 k Ω

ECCN Code :

EAR99

Max Operating Temperature :

150°C

Element Configuration :

Single

Min Operating Temperature :

-55°C

Transistor Type :

PNP - Pre-Biased

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

Terminal Form :

Flat

Terminal Finish :

Tin (Sn)

Max Collector Current :

100mA

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

500nA

Radiation Hardening :

No

Factory Lead Time :

4 Weeks

Number of Elements :

1

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Max Power Dissipation :

254mW

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Reference Standard :

AEC-Q101

Published :

2013