NSBA114EDP6T5G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Number of Elements :

2

Min Operating Temperature :

-55°C

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Terminal Finish :

Tin (Sn)

Number of Pins :

6

Polarity :

PNP

Current - Collector Cutoff (Max) :

500nA

Max Power Dissipation :

338mW

Max Collector Current :

100mA

hFE Min :

35

Factory Lead Time :

8 Weeks

Resistor - Base (R1) :

10k Ω

Collector Emitter Voltage (VCEO) :

50V

Pin Count :

6

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Resistor - Emitter Base (R2) :

10k Ω

Number of Terminations :

6

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Surface Mount :

yes

Terminal Form :

Flat

RoHS Status :

ROHS3 Compliant

Max Operating Temperature :

150°C

Transistor Type :

2 PNP - Pre-Biased (Dual)

ECCN Code :

EAR99

Base Part Number :

NSBA1*

Package / Case :

SOT-963

Element Configuration :

Dual

Packaging :

Tape and Reel (TR)

Published :

2008

Radiation Hardening :

No

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

JESD-609 Code :

e3

Collector Emitter Breakdown Voltage :

50V