NSBA114EDXV6T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Number of Elements :

2

Peak Reflow Temperature (Cel) :

260

Max Operating Temperature :

150°C

Radiation Hardening :

No

JESD-609 Code :

e3

hFE Min :

35

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Transistor Type :

2 PNP - Pre-Biased (Dual)

Mounting Type :

Surface Mount

Min Operating Temperature :

-55°C

Element Configuration :

Dual

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Number of Pins :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Flat

Pin Count :

6

Max Breakdown Voltage :

50V

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Package / Case :

SOT-563, SOT-666

Pbfree Code :

yes

Max Power Dissipation :

500mW

Base Part Number :

NSBA1*

Factory Lead Time :

2 Weeks

Lead Free :

Lead Free

Collector Emitter Breakdown Voltage :

50V

Current - Collector Cutoff (Max) :

500nA

Collector Emitter Voltage (VCEO) :

50V

Published :

2006

Polarity :

PNP

Resistor - Base (R1) :

10k Ω

Current Rating :

-100mA

Power Dissipation :

357mW

ECCN Code :

EAR99

Resistor - Emitter Base (R2) :

10k Ω

Max Collector Current :

100mA

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

RoHS Status :

ROHS3 Compliant

Number of Terminations :

6

Voltage - Rated DC :

-50V

Continuous Collector Current :

-100mA

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Finish :

Tin (Sn)