NSBA123JDP6T5G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Number of Terminations :

6

Collector Emitter Voltage (VCEO) :

50V

Terminal Form :

Flat

Transistor Type :

2 PNP - Pre-Biased (Dual)

Number of Pins :

6

Published :

2010

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Package / Case :

SOT-963

Transistor Application :

SWITCHING

Min Operating Temperature :

-55°C

Max Operating Temperature :

150°C

Element Configuration :

Dual

Polarity :

PNP

Resistor - Emitter Base (R2) :

47k Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Collector Emitter Breakdown Voltage :

50V

Surface Mount :

yes

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

500nA

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Factory Lead Time :

8 Weeks

Terminal Finish :

Tin (Sn)

Mounting Type :

Surface Mount

Max Collector Current :

100mA

JESD-609 Code :

e3

Base Part Number :

NSBA1*

Pin Count :

6

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Number of Elements :

2

Lead Free :

Lead Free

hFE Min :

80

Radiation Hardening :

No

Resistor - Base (R1) :

2.2k Ω

Max Power Dissipation :

408mW