NSBA115TDP6T5G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Additional Feature :

BUILT IN BIAS RESISTOR

Terminal Form :

Flat

Published :

2010

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

Element Configuration :

Dual

Transistor Type :

2 NPN - Pre-Biased (Dual)

Collector Emitter Voltage (VCEO) :

50V

Resistor - Base (R1) :

100k Ω

Pin Count :

6

Lead Free :

Lead Free

ECCN Code :

EAR99

Min Operating Temperature :

-55°C

Collector Emitter Breakdown Voltage :

50V

Max Power Dissipation :

408mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Polarity :

PNP

Current - Collector Cutoff (Max) :

500nA

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA

Radiation Hardening :

No

Factory Lead Time :

8 Weeks

Max Collector Current :

100mA

Base Part Number :

NSBA1*

Number of Terminations :

6

Max Operating Temperature :

150°C

hFE Min :

160

Package / Case :

SOT-963

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Surface Mount :

yes

Number of Pins :

6

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 5mA 10V

Pbfree Code :

yes

Number of Elements :

2