NSBA114YDXV6T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Lead Free :

Lead Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Peak Reflow Temperature (Cel) :

260

Max Collector Current :

100mA

Collector Emitter Voltage (VCEO) :

50V

Radiation Hardening :

No

Factory Lead Time :

2 Weeks

Resistor - Base (R1) :

10k Ω

Transistor Type :

2 PNP - Pre-Biased (Dual)

Min Operating Temperature :

-55°C

Pin Count :

6

Polarity :

PNP

hFE Min :

80

Published :

2006

JESD-609 Code :

e3

Voltage - Rated DC :

-50V

Max Output Current :

100mA

Max Breakdown Voltage :

50V

Number of Pins :

6

Operating Supply Voltage :

50V

ECCN Code :

EAR99

Base Part Number :

NSBA1*

Continuous Collector Current :

-100mA

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Power Dissipation :

357mW

Current Rating :

-100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Number of Elements :

2

Element Configuration :

Dual

Max Power Dissipation :

500mW

Number of Terminations :

6

Terminal Finish :

Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

40

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 0.21

Max Operating Temperature :

150°C

Collector Emitter Breakdown Voltage :

50V

Resistor - Emitter Base (R2) :

47k Ω

Current - Collector Cutoff (Max) :

500nA

Surface Mount :

yes

Mounting Type :

Surface Mount

Package / Case :

SOT-563, SOT-666

Packaging :

Tape and Reel (TR)

Terminal Form :

Flat

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA