MS1227

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Transistor Element Material :

SILICON

Transistor Type :

NPN

Number of Pins :

4

Max Power Dissipation :

80W

Number of Elements :

1

Number of Terminations :

4

Terminal Position :

Radial

Terminal Form :

Flat

Collector Emitter Breakdown Voltage :

18V

Max Collector Current :

4.5A

Mounting Type :

Chassis Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 1A 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

WITH EMITTER BALLASTING RESISTORS

Collector Base Voltage (VCBO) :

36V

JESD-609 Code :

e0

Package / Case :

M113

Pbfree Code :

No

Lead Free :

Lead Free

Max Frequency :

30MHz

ECCN Code :

EAR99

Frequency - Transition :

30MHz

Terminal Finish :

TIN LEAD

Packaging :

Bulk

Collector Emitter Voltage (VCEO) :

18V

Mount :

Chassis Mount, Screw

Radiation Hardening :

No

RoHS Status :

RoHS Compliant

Highest Frequency Band :

HIGH FREQUENCY B

Polarity/Channel Type :

NPN

Pin Count :

4

Operating Temperature :

200°C TJ

Output Power :

20W

Configuration :

Single

Gain :

15dB

Collector-Base Capacitance-Max :

135pF

Lifecycle Status :

IN PRODUCTION (Last Updated: 2 weeks ago)