MS1202

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Collector Emitter Breakdown Voltage :

35V

Power - Max :

15W

RoHS Status :

RoHS Compliant

Case Connection :

Emitter

Transistor Type :

NPN

Packaging :

Bulk

Gain :

8.4dB

Number of Pins :

4

Terminal Position :

Radial

Collector-Base Capacitance-Max :

15pF

Published :

2003

Polarity/Channel Type :

NPN

Mounting Type :

Chassis Mount

Configuration :

Single

Number of Terminations :

4

Number of Elements :

1

DC Current Gain (hFE) (Min) @ Ic, Vce :

5 @ 100mA 5V

Max Collector Current :

1A

Collector Base Voltage (VCBO) :

65V

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Transistor Application :

AMPLIFIER

Highest Frequency Band :

VERY HIGH FREQUENCY B

Radiation Hardening :

No

Terminal Form :

Flat

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

15W

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

35V

Package / Case :

M135

ECCN Code :

EAR99

Frequency - Transition :

118MHz~136MHz

Additional Feature :

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

Operating Temperature :

200°C TJ

Mount :

Chassis Mount, Stud

Pin Count :

4