MS1226

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Collector Emitter Breakdown Voltage :

36V

Frequency - Transition :

30MHz

Collector-Base Capacitance-Max :

65pF

Highest Frequency Band :

HIGH FREQUENCY B

Number of Terminations :

4

Transistor Element Material :

SILICON

Terminal Finish :

Tin/Lead (Sn/Pb)

Packaging :

Bulk

Transistor Type :

NPN

Configuration :

Single

Factory Lead Time :

32 Weeks

Max Collector Current :

4.5A

Polarity/Channel Type :

NPN

Terminal Position :

Radial

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Flat

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Gain :

18dB

Operating Temperature :

200°C TJ

Number of Pins :

4

Additional Feature :

High Reliability

JESD-609 Code :

e0

Pbfree Code :

No

Max Power Dissipation :

80W

Collector Emitter Voltage (VCEO) :

36V

Collector Base Voltage (VCBO) :

65V

ECCN Code :

EAR99

RoHS Status :

RoHS Compliant

Number of Elements :

1

Mount :

Chassis Mount, Screw

Pin Count :

4

Max Frequency :

30MHz

Radiation Hardening :

No

Mounting Type :

Chassis Mount

Published :

1998

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 500mA 5V

Package / Case :

M113