MS1226

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Operating Temperature :

200°C TJ

Terminal Position :

Radial

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 500mA 5V

Polarity/Channel Type :

NPN

Max Frequency :

30MHz

Packaging :

Bulk

Number of Pins :

4

Collector-Base Capacitance-Max :

65pF

RoHS Status :

RoHS Compliant

Configuration :

Single

Frequency - Transition :

30MHz

Collector Base Voltage (VCBO) :

65V

Max Power Dissipation :

80W

Additional Feature :

High Reliability

Transistor Type :

NPN

Factory Lead Time :

32 Weeks

Collector Emitter Breakdown Voltage :

36V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

1998

Pbfree Code :

No

Number of Elements :

1

Transistor Element Material :

SILICON

Terminal Form :

Flat

JESD-609 Code :

e0

Highest Frequency Band :

HIGH FREQUENCY B

Gain :

18dB

Radiation Hardening :

No

Terminal Finish :

Tin/Lead (Sn/Pb)

Mounting Type :

Chassis Mount

ECCN Code :

EAR99

Mount :

Chassis Mount, Screw

Package / Case :

M113

Pin Count :

4

Max Collector Current :

4.5A

Number of Terminations :

4

Collector Emitter Voltage (VCEO) :

36V