MP6K14TCR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.032Ohm

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Drain to Source Voltage (Vdss) :

30V

Mount :

Surface Mount

DS Breakdown Voltage-Min :

30V

JESD-609 Code :

e2

Power - Max :

2W

Gate Charge (Qg) (Max) @ Vgs :

7.3nC @ 5V

FET Type :

2 N-Channel (Dual)

Number of Terminations :

6

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Qualification Status :

Not Qualified

Published :

2011

Operating Temperature :

150°C TJ

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

10

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

470pF @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

Logic Level Gate

Continuous Drain Current (ID) :

8A

Pin Count :

6

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PDSO-F6

Pbfree Code :

yes

Terminal Finish :

TIN COPPER

Number of Elements :

2

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Package / Case :

6-SMD, Flat Leads

Max Power Dissipation :

2W

Rds On (Max) @ Id, Vgs :

25m Ω @ 8A, 10V

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

8A

Base Part Number :

*K14