MP6K31TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Element Configuration :

Dual

Drain to Source Breakdown Voltage :

60V

JESD-609 Code :

e2

Input Capacitance (Ciss) (Max) @ Vds :

110pF @ 10V

Drain to Source Voltage (Vdss) :

60V

Package / Case :

6-SMD, Flat Leads

FET Feature :

Logic Level Gate

Case Connection :

DRAIN

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

TIN COPPER

Max Power Dissipation :

2W

Power Dissipation :

2W

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

8A

Vgs(th) (Max) @ Id :

2.5V @ 1mA

FET Type :

2 N-Channel (Dual)

Rds On (Max) @ Id, Vgs :

290m Ω @ 2A, 10V

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Number of Terminations :

6

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

2nC @ 5V

Number of Pins :

6

Drain Current-Max (Abs) (ID) :

2A

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

2A

Base Part Number :

*K31

Drain-source On Resistance-Max :

0.35Ohm

Number of Elements :

2

Qualification Status :

Not Qualified

Pin Count :

6

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

150°C TJ

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

10

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Published :

2010