MP6K11TCR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Input Capacitance (Ciss) (Max) @ Vds :

85pF @ 10V

DS Breakdown Voltage-Min :

30V

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

98m Ω @ 3.5A, 10V

Base Part Number :

*K11

Time@Peak Reflow Temperature-Max (s) :

10

Pbfree Code :

yes

Operating Temperature :

150°C TJ

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

Logic Level Gate

Published :

2011

Number of Elements :

2

ECCN Code :

EAR99

JESD-30 Code :

R-PDSO-F6

Transistor Application :

SWITCHING

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

1.9nC @ 5V

Drain-source On Resistance-Max :

0.14Ohm

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

3.5A

Max Power Dissipation :

2W

Mounting Type :

Surface Mount

Pin Count :

6

Drain to Source Voltage (Vdss) :

30V

Transistor Element Material :

SILICON

Package / Case :

6-SMD, Flat Leads

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

6

RoHS Status :

ROHS3 Compliant

Power - Max :

2W

FET Type :

2 N-Channel (Dual)

Pulsed Drain Current-Max (IDM) :

12A

Terminal Finish :

TIN COPPER

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE