MP6K11TCR
- Mfr.Part #
- MP6K11TCR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 6-SMD, Flat Leads
- Datasheet
- Download
- Description
- MOSFET 2N-CH 30V 3.5A MPT6
- Stock
- 1,229
- In Stock :
- 1,229
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 1.9nC @ 5V
- Pbfree Code :
- yes
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA
- Case Connection :
- DRAIN
- Time@Peak Reflow Temperature-Max (s) :
- 10
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 3.5A
- Pin Count :
- 6
- Drain to Source Voltage (Vdss) :
- 30V
- Terminal Finish :
- TIN COPPER
- Rds On (Max) @ Id, Vgs :
- 98m Ω @ 3.5A, 10V
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 2
- Qualification Status :
- Not Qualified
- Max Power Dissipation :
- 2W
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Base Part Number :
- *K11
- Configuration :
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- JESD-609 Code :
- e2
- Power - Max :
- 2W
- Number of Terminations :
- 6
- Pulsed Drain Current-Max (IDM) :
- 12A
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Packaging :
- Tape and Reel (TR)
- FET Type :
- 2 N-Channel (Dual)
- Input Capacitance (Ciss) (Max) @ Vds :
- 85pF @ 10V
- DS Breakdown Voltage-Min :
- 30V
- Drain-source On Resistance-Max :
- 0.14Ohm
- FET Feature :
- Logic Level Gate
- Published :
- 2011
- Package / Case :
- 6-SMD, Flat Leads
- JESD-30 Code :
- R-PDSO-F6
- Datasheets
- MP6K11TCR

MP6K11TCR datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ROHM Semiconductor stock available at
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