MMBTH81

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Terminal Form :

Gull wing

Number of Elements :

1

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

hFE Min :

60

Collector Base Voltage (VCBO) :

20V

RoHS Status :

ROHS3 Compliant

Contact Plating :

Tin

Package / Case :

TO-236-3, SC-59, SOT-23-3

Weight :

30mg

Voltage - Rated DC :

-20V

Width :

1.3mm

Published :

2000

Max Power Dissipation :

225mW

Mounting Type :

Surface Mount

Collector Emitter Breakdown Voltage :

20V

Gain Bandwidth Product :

600MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 10V

Height :

1.11mm

Transistor Element Material :

SILICON

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Mount :

Surface Mount

Transistor Type :

PNP

Terminal Position :

Dual

Max Collector Current :

50mA

JESD-609 Code :

e3

Lead Free :

Lead Free

Max Breakdown Voltage :

20V

Pbfree Code :

yes

Continuous Collector Current :

50mA

Polarity/Channel Type :

PNP

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Transition Frequency :

600MHz

Transistor Application :

AMPLIFIER

Emitter Base Voltage (VEBO) :

3V

Frequency :

600MHz

Radiation Hardening :

No

Number of Terminations :

3

Power Dissipation :

225mW

Collector-Base Capacitance-Max :

0.85pF

Collector Emitter Saturation Voltage :

500mV

Max Junction Temperature (Tj) :

150°C

Current Rating :

-50mA

Collector Emitter Voltage (VCEO) :

20V

Packaging :

Tape and Reel (TR)

Factory Lead Time :

42 Weeks

Number of Pins :

3

Base Part Number :

MMBTH81

Operating Temperature :

-55°C~150°C TJ

Length :

2.92mm