MMBTH81

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Transition Frequency :

600MHz

Contact Plating :

Tin

hFE Min :

60

Number of Elements :

1

Frequency :

600MHz

Pbfree Code :

yes

JESD-609 Code :

e3

Continuous Collector Current :

50mA

Collector-Base Capacitance-Max :

0.85pF

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Operating Temperature :

-55°C~150°C TJ

Polarity/Channel Type :

PNP

Terminal Position :

Dual

Collector Base Voltage (VCBO) :

20V

Collector Emitter Breakdown Voltage :

20V

ECCN Code :

EAR99

Max Breakdown Voltage :

20V

Lead Free :

Lead Free

Radiation Hardening :

No

Element Configuration :

Single

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Form :

Gull wing

Voltage - Rated DC :

-20V

Width :

1.3mm

Transistor Application :

AMPLIFIER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Weight :

30mg

Transistor Type :

PNP

Packaging :

Tape and Reel (TR)

Collector Emitter Voltage (VCEO) :

20V

Power Dissipation :

225mW

Number of Terminations :

3

Published :

2000

Max Power Dissipation :

225mW

Height :

1.11mm

Length :

2.92mm

Mount :

Surface Mount

Collector Emitter Saturation Voltage :

500mV

Factory Lead Time :

42 Weeks

Number of Pins :

3

Emitter Base Voltage (VEBO) :

3V

Gain Bandwidth Product :

600MHz

Max Junction Temperature (Tj) :

150°C

Max Collector Current :

50mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 10V

RoHS Status :

ROHS3 Compliant

Current Rating :

-50mA

Base Part Number :

MMBTH81