MMBTH24

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Factory Lead Time :

7 Weeks

Max Power Dissipation :

225mW

Element Configuration :

Single

Number of Pins :

3

Packaging :

Tape and Reel (TR)

Power Dissipation :

225mW

Package / Case :

TO-236-3, SC-59, SOT-23-3

Peak Reflow Temperature (Cel) :

260

Transistor Type :

NPN

Transition Frequency :

400MHz

Terminal Position :

Dual

Weight :

30mg

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Collector Emitter Breakdown Voltage :

30V

Current Rating :

50mA

Max Breakdown Voltage :

30V

Continuous Collector Current :

50mA

Published :

2002

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Voltage (VCEO) :

30V

Transistor Application :

AMPLIFIER

RoHS Status :

RoHS Compliant

Frequency :

400MHz

Polarity/Channel Type :

NPN

Height :

930μm

Gain Bandwidth Product :

400MHz

Collector Base Voltage (VCBO) :

40V

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Width :

1.3mm

Base Part Number :

MMBTH24

Radiation Hardening :

No

Terminal Finish :

Tin (Sn)

Lead Free :

Lead Free

Number of Terminations :

3

Length :

2.92mm

Terminal Form :

Gull wing

ECCN Code :

EAR99

Max Collector Current :

50mA

hFE Min :

30

Number of Elements :

1

Voltage - Rated DC :

30V

Transistor Element Material :

SILICON

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 day ago)

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 8mA 10V

Emitter Base Voltage (VEBO) :

4V