MMBTH24-7-F

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - RF

hFE Min :

30

Collector Emitter Breakdown Voltage :

40V

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Application :

AMPLIFIER

Base Part Number :

MMBTH24

Transistor Type :

NPN

Mount :

Surface Mount

Collector-Base Capacitance-Max :

0.7pF

ECCN Code :

EAR99

Power Dissipation :

300mW

Height :

1mm

Gain Bandwidth Product :

400MHz

Collector Emitter Voltage (VCEO) :

40V

Number of Terminations :

3

Transistor Element Material :

SILICON

Pin Count :

3

Voltage - Rated DC :

40V

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Width :

1.4mm

Terminal Finish :

Matte Tin (Sn)

Collector Base Voltage (VCBO) :

40V

Lead Free :

Lead Free

Radiation Hardening :

No

Number of Pins :

3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Collector Emitter Saturation Voltage :

500mV

Published :

2000

Terminal Position :

Dual

Continuous Collector Current :

50mA

Max Breakdown Voltage :

40V

Packaging :

Tape and Reel (TR)

Max Collector Current :

50mA

Frequency :

400MHz

JESD-609 Code :

e3

Length :

3.05mm

Max Power Dissipation :

300mW

Emitter Base Voltage (VEBO) :

4V

Peak Reflow Temperature (Cel) :

260

Weight :

7.994566mg

Current Rating :

50mA

Factory Lead Time :

15 Weeks

Polarity/Channel Type :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 8mA 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Transition Frequency :

400MHz

Number of Elements :

1

REACH SVHC :

No SVHC

Pbfree Code :

yes