MMBTH11

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Transistor Type :

NPN

Lead Free :

Lead Free

Collector-Base Capacitance-Max :

0.7pF

Package / Case :

TO-236-3, SC-59, SOT-23-3

Max Breakdown Voltage :

25V

Number of Terminations :

3

Terminal Form :

Gull wing

Gain Bandwidth Product :

650MHz

Polarity/Channel Type :

NPN

Operating Temperature :

-55°C~150°C TJ

Max Collector Current :

50mA

Weight :

30mg

Output Power :

225mW

Width :

1.3mm

Length :

2.92mm

Current Rating :

50mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 4mA 10V

Number of Pins :

3

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

25V

hFE Min :

60

Element Configuration :

Single

Continuous Collector Current :

50mA

Transition Frequency :

650MHz

Height :

930μm

Max Power Dissipation :

225mW

Collector Base Voltage (VCBO) :

30V

Factory Lead Time :

6 Weeks

Pbfree Code :

yes

Lifecycle Status :

LIFETIME (Last Updated: 4 days ago)

Collector Emitter Voltage (VCEO) :

25V

Mount :

Surface Mount

JESD-609 Code :

e3

Collector Emitter Saturation Voltage :

500mV

Packaging :

Tape and Reel (TR)

Base Part Number :

MMBTH11

Mounting Type :

Surface Mount

Collector Emitter Breakdown Voltage :

25V

Frequency :

650MHz

Radiation Hardening :

No

Published :

2002

Emitter Base Voltage (VEBO) :

3V

Power Dissipation :

225mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Terminal Position :

Dual

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Transistor Application :

AMPLIFIER