MMBTH11

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Continuous Collector Current :

50mA

Terminal Position :

Dual

Transistor Type :

NPN

Width :

1.3mm

Number of Terminations :

3

Emitter Base Voltage (VEBO) :

3V

ECCN Code :

EAR99

Lifecycle Status :

LIFETIME (Last Updated: 4 days ago)

Voltage - Rated DC :

25V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transistor Element Material :

SILICON

Collector Emitter Saturation Voltage :

500mV

Lead Free :

Lead Free

Pbfree Code :

yes

Mounting Type :

Surface Mount

Output Power :

225mW

Terminal Finish :

Tin (Sn)

Transition Frequency :

650MHz

Weight :

30mg

Frequency :

650MHz

Collector Emitter Breakdown Voltage :

25V

Published :

2002

Polarity/Channel Type :

NPN

Height :

930μm

Gain Bandwidth Product :

650MHz

Max Collector Current :

50mA

Length :

2.92mm

Number of Pins :

3

Base Part Number :

MMBTH11

Collector Base Voltage (VCBO) :

30V

Number of Elements :

1

Transistor Application :

AMPLIFIER

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

hFE Min :

60

Factory Lead Time :

6 Weeks

Power Dissipation :

225mW

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

25V

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 4mA 10V

Collector-Base Capacitance-Max :

0.7pF

JESD-609 Code :

e3

Terminal Form :

Gull wing

Current Rating :

50mA

Max Breakdown Voltage :

25V

Max Power Dissipation :

225mW

Element Configuration :

Single