MMBTH10RG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Transistor Element Material :

SILICON

Factory Lead Time :

7 Weeks

Pbfree Code :

yes

Transistor Type :

NPN

Collector Emitter Voltage (VCEO) :

40V

Number of Elements :

1

Width :

1.3mm

hFE Min :

50

Packaging :

Tape and Reel (TR)

Collector Emitter Breakdown Voltage :

40V

Continuous Collector Current :

45mA

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Weight :

30mg

Published :

2008

Output Power :

225mW

Max Collector Current :

50mA

Collector Base Voltage (VCBO) :

40V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Emitter Base Voltage (VEBO) :

4V

Terminal Form :

Gull wing

Max Power Dissipation :

225mW

Length :

2.92mm

Base Part Number :

MMBTH10

Transistor Application :

AMPLIFIER

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Number of Terminations :

3

Voltage - Rated DC :

40V

Height :

930μm

Frequency :

450MHz

Terminal Position :

Dual

Mount :

Surface Mount

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Number of Pins :

3

Radiation Hardening :

No

Collector-Base Capacitance-Max :

0.6pF

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Polarity/Channel Type :

NPN

Transition Frequency :

450MHz

Mounting Type :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 1mA 6V

Current Rating :

50mA

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gain Bandwidth Product :

450MHz