MMBTH10LT3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Surface Mount :

yes

Max Collector Current :

500mA

Max Power Dissipation :

225mW

Polarity/Channel Type :

NPN

Width :

2.64mm

Transistor Type :

NPN

Element Configuration :

Single

Gain Bandwidth Product :

650MHz

hFE Min :

60

Number of Pins :

3

Collector-Base Capacitance-Max :

0.7pF

ECCN Code :

EAR99

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Collector Emitter Breakdown Voltage :

25V

Length :

3.04mm

Number of Terminations :

3

Collector Emitter Saturation Voltage :

500mV

Collector Base Voltage (VCBO) :

30V

Peak Reflow Temperature (Cel) :

260

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Height :

1.11mm

Pin Count :

3

Terminal Finish :

Tin (Sn)

Power Dissipation :

300mW

Transition Frequency :

650MHz

Published :

2012

Radiation Hardening :

No

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Base Part Number :

MMBTH10

Emitter Base Voltage (VEBO) :

3V

Number of Elements :

1

Halogen Free :

Halogen Free

Factory Lead Time :

8 Weeks

Collector Emitter Voltage (VCEO) :

25V

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 4mA 10V

Frequency :

650MHz