MMBTH10LT3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Polarity/Channel Type :

NPN

JESD-609 Code :

e3

Transistor Type :

NPN

ECCN Code :

EAR99

Surface Mount :

yes

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

8 Weeks

Power Dissipation :

300mW

Collector Emitter Voltage (VCEO) :

25V

Element Configuration :

Single

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

3

Lead Free :

Lead Free

Pin Count :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 4mA 10V

Packaging :

Tape and Reel (TR)

Collector-Base Capacitance-Max :

0.7pF

hFE Min :

60

Collector Emitter Breakdown Voltage :

25V

Max Collector Current :

500mA

Length :

3.04mm

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Published :

2012

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

40

Frequency :

650MHz

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Collector Base Voltage (VCBO) :

30V

Width :

2.64mm

Terminal Finish :

Tin (Sn)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Position :

Dual

Max Power Dissipation :

225mW

Radiation Hardening :

No

Height :

1.11mm

Operating Temperature :

-55°C~150°C TJ

Gain Bandwidth Product :

650MHz

Base Part Number :

MMBTH10

Collector Emitter Saturation Voltage :

500mV

Emitter Base Voltage (VEBO) :

3V

Pbfree Code :

yes

Halogen Free :

Halogen Free

Transition Frequency :

650MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)