MMBTH10LT1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Number of Elements :

1

Base Part Number :

MMBTH10

Contact Plating :

Tin

Number of Terminations :

3

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Transistor Type :

NPN

Lead Free :

Lead Free

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

JESD-609 Code :

e3

Collector Emitter Saturation Voltage :

500mV

Time@Peak Reflow Temperature-Max (s) :

40

Height :

1.11mm

Collector Base Voltage (VCBO) :

30V

Length :

3.04mm

Operating Temperature :

-55°C~150°C TJ

hFE Min :

60

Collector Emitter Voltage (VCEO) :

25V

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Terminal Form :

Gull wing

Collector Emitter Breakdown Voltage :

25V

Max Junction Temperature (Tj) :

150°C

Package / Case :

TO-236-3, SC-59, SOT-23-3

Max Collector Current :

100nA

Radiation Hardening :

No

Frequency :

650MHz

Element Configuration :

Single

Polarity/Channel Type :

NPN

Termination :

SMD/SMT

REACH SVHC :

No SVHC

Max Breakdown Voltage :

25V

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 4mA 10V

Packaging :

Tape and Reel (TR)

Published :

2001

Power Dissipation :

225mW

Voltage - Rated DC :

25V

Pin Count :

3

Halogen Free :

Halogen Free

Peak Reflow Temperature (Cel) :

260

Transition Frequency :

650MHz

Collector-Base Capacitance-Max :

0.7pF

Factory Lead Time :

8 Weeks

Pbfree Code :

yes

Current Rating :

4mA

Gain Bandwidth Product :

650MHz

Width :

1.4mm

Weight :

4.535924g

Surface Mount :

yes

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

225mW

Emitter Base Voltage (VEBO) :

3V