MMBTH10-4LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

JESD-609 Code :

e3

Collector Emitter Saturation Voltage :

500mV

hFE Min :

120

Collector Base Voltage (VCBO) :

30V

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

Terminal Form :

Gull wing

Collector Emitter Voltage (VCEO) :

25V

Terminal Position :

Dual

Frequency :

800MHz

Max Power Dissipation :

225mW

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Element Configuration :

Single

Transistor Element Material :

SILICON

Collector-Base Capacitance-Max :

0.7pF

Number of Pins :

3

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Base Part Number :

MMBTH10

ECCN Code :

EAR99

Transition Frequency :

800MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

25V

Current Rating :

4mA

Emitter Base Voltage (VEBO) :

3V

Polarity/Channel Type :

NPN

Gain Bandwidth Product :

800MHz

Terminal Finish :

Tin (Sn)

Factory Lead Time :

8 Weeks

Pbfree Code :

yes

Max Breakdown Voltage :

25V

Surface Mount :

yes

Transistor Type :

NPN

Pin Count :

3

Collector Current-Max (IC) :

0.025A

Radiation Hardening :

No

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Halogen Free :

Halogen Free

Time@Peak Reflow Temperature-Max (s) :

40

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 4mA 10V

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-236-3, SC-59, SOT-23-3

Collector Emitter Breakdown Voltage :

25V

Published :

2008

Power Dissipation :

300mW