MMBT918LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Number of Pins :

3

Max Power Dissipation :

225mW

Lead Free :

Lead Free

Published :

2006

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Height :

1.01mm

Width :

1.4mm

hFE Min :

20

Factory Lead Time :

2 Weeks

Collector Emitter Voltage (VCEO) :

15V

Base Part Number :

MMBT918

Packaging :

Cut Tape (CT)

Transistor Type :

NPN

Terminal Position :

Dual

Number of Elements :

1

Gain Bandwidth Product :

600MHz

Emitter Base Voltage (VEBO) :

3V

Number of Terminations :

3

Gain :

11dB

Collector Emitter Breakdown Voltage :

15V

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Form :

Gull wing

Transition Frequency :

600MHz

Max Breakdown Voltage :

15V

Transistor Element Material :

SILICON

Length :

3.04mm

Collector Base Voltage (VCBO) :

30V

Operating Temperature :

-55°C~150°C TJ

Current Rating :

50mA

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Noise Figure (dB Typ @ f) :

6dB @ 60MHz

Package / Case :

TO-236-3, SC-59, SOT-23-3

Element Configuration :

Single

Frequency :

600MHz

REACH SVHC :

No SVHC

Voltage - Rated DC :

15V

Contact Plating :

Tin

Power Dissipation :

300mW

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Collector Emitter Saturation Voltage :

400mV

Pin Count :

3

ECCN Code :

EAR99

Max Collector Current :

50mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 3mA 1V

Polarity/Channel Type :

NPN