MMBT918

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Polarity/Channel Type :

NPN

Gain Bandwidth Product :

600MHz

Current Rating :

50mA

Number of Terminations :

3

Power Dissipation :

225mW

JESD-609 Code :

e3

Terminal Form :

Gull wing

Number of Elements :

1

Terminal Position :

Dual

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 3mA 1V

Published :

2000

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Collector Base Voltage (VCBO) :

30V

Terminal Finish :

Tin (Sn)

Collector Emitter Breakdown Voltage :

15V

Emitter Base Voltage (VEBO) :

3V

hFE Min :

20

Frequency :

600MHz

Transistor Application :

AMPLIFIER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Noise Figure (dB Typ @ f) :

6dB @ 60MHz

Radiation Hardening :

No

Transistor Element Material :

SILICON

Width :

1.3mm

Base Part Number :

MMBT918

Pbfree Code :

yes

RoHS Status :

RoHS Compliant

Length :

2.92mm

Collector Emitter Saturation Voltage :

400mV

Weight :

30mg

Height :

930μm

Number of Pins :

3

Transistor Type :

NPN

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Gain :

15dB

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Voltage (VCEO) :

15V

Continuous Collector Current :

50mA

Mount :

Surface Mount

Package / Case :

TO-236-3, SC-59, SOT-23-3

Voltage - Rated DC :

15V

Max Power Dissipation :

225mW

Transition Frequency :

600MHz

Max Collector Current :

50mA

Mounting Type :

Surface Mount

Max Breakdown Voltage :

15V

Factory Lead Time :

6 Weeks