MMBT5179

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Number of Terminations :

3

VCEsat-Max :

0.4 V

Length :

2.92mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

225mW

Terminal Form :

Gull wing

Height :

930μm

Power Dissipation :

225mW

Voltage - Rated DC :

12V

Mount :

Surface Mount

ECCN Code :

EAR99

Terminal Finish :

Tin (Sn)

Packaging :

Tape and Reel (TR)

Frequency :

2GHz

Max Collector Current :

50mA

Transistor Type :

NPN

Lead Free :

Lead Free

Gain Bandwidth Product :

2 GHz

Weight :

30mg

Emitter Base Voltage (VEBO) :

2.5V

Terminal Position :

Dual

REACH SVHC :

No SVHC

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 3mA 1V

Factory Lead Time :

42 Weeks

Package / Case :

TO-236-3, SC-59, SOT-23-3

Noise Figure (dB Typ @ f) :

5dB @ 200MHz

Published :

2001

RoHS Status :

ROHS3 Compliant

Gain :

15dB

Collector Emitter Voltage (VCEO) :

12V

Number of Pins :

3

Collector Emitter Breakdown Voltage :

12V

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 20 hours ago)

Continuous Collector Current :

50mA

Transistor Application :

AMPLIFIER

Number of Elements :

1

Radiation Hardening :

No

Collector Base Voltage (VCBO) :

20V

Current Rating :

50mA

Pbfree Code :

yes

Polarity/Channel Type :

NPN

Operating Temperature :

-55°C~150°C TJ

Max Breakdown Voltage :

12V

Base Part Number :

MMBT5179

hFE Min :

25

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Width :

1.3mm

Transition Frequency :

900MHz

Element Configuration :

Single