MJD47TF
- Mfr.Part #
- MJD47TF
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 250V 1A DPAK
- Stock
- 8,006
- In Stock :
- 8,006
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Contact Plating :
- Tin
- Base Part Number :
- MJD47
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 350V
- Mount :
- Surface Mount
- Power Dissipation :
- 1.56W
- Published :
- 2012
- Max Collector Current :
- 1A
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Pbfree Code :
- yes
- Factory Lead Time :
- 4 Weeks
- Width :
- 6.22mm
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 6.73mm
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 250V
- Current Rating :
- 1A
- Number of Terminations :
- 2
- Collector Emitter Saturation Voltage :
- 1V
- Terminal Form :
- Gull wing
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 300mA 10V
- Element Configuration :
- Single
- Number of Pins :
- 3
- Gain Bandwidth Product :
- 10MHz
- Collector Emitter Breakdown Voltage :
- 250V
- Frequency :
- 10MHz
- Voltage - Rated DC :
- 250V
- Packaging :
- Tape and Reel (TR)
- Additional Feature :
- High Reliability
- JESD-30 Code :
- R-PSSO-G2
- Max Power Dissipation :
- 1.56W
- Transistor Type :
- NPN
- Weight :
- 260.37mg
- Height :
- 2.38mm
- Transition Frequency :
- 10MHz
- RoHS Status :
- RoHS Compliant
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 6 days ago)
- Collector Emitter Voltage (VCEO) :
- 250V
- Current - Collector Cutoff (Max) :
- 200μA
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 200mA, 1A
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- hFE Min :
- 30
- JESD-609 Code :
- e3
- Datasheets
- MJD47TF
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NPN 150°C TJ 200μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD47TF Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 30 @ 300mA 10V DC current gain.As it features a collector emitter saturation voltage of 1V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 10MHz in the part.Single BJT transistor can be broken down at a voltage of 250V volts.When collector current reaches its maximum, it can reach 1A volts.
MJD47TF Features
the DC current gain for this device is 30 @ 300mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 10MHz
MJD47TF Applications
There are a lot of ON Semiconductor
MJD47TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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