MJD47T4G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Base Voltage (VCBO) :

350V

Gain Bandwidth Product :

10MHz

Surface Mount :

yes

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

250V

Transistor Type :

NPN

Width :

6.22mm

Contact Plating :

Tin

Pbfree Code :

yes

hFE Min :

30

Terminal Form :

Gull wing

Element Configuration :

Single

REACH SVHC :

No SVHC

Base Part Number :

MJD47

Factory Lead Time :

8 Weeks

Mounting Type :

Surface Mount

Packaging :

Cut Tape (CT)

Polarity/Channel Type :

NPN

Case Connection :

COLLECTOR

Current Rating :

1A

Lead Free :

Lead Free

Operating Temperature :

-65°C~150°C TJ

Pin Count :

3

Number of Pins :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 300mA 10V

Voltage - Rated DC :

250V

Length :

6.73mm

Max Breakdown Voltage :

250V

Max Collector Current :

1A

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Emitter Base Voltage (VEBO) :

5V

Power Dissipation :

1.56W

JESD-30 Code :

R-PSSO-G2

Lifecycle Status :

ACTIVE (Last Updated: 17 hours ago)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Collector Emitter Voltage (VCEO) :

250V

Vce Saturation (Max) @ Ib, Ic :

1V @ 200mA, 1A

Radiation Hardening :

No

Transition Frequency :

10MHz

Time@Peak Reflow Temperature-Max (s) :

40

Height :

2.38mm

Collector Emitter Saturation Voltage :

1V

Current - Collector Cutoff (Max) :

200μA

RoHS Status :

ROHS3 Compliant

Frequency :

10MHz

Published :

2005

Number of Terminations :

2

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

4.535924g

JESD-609 Code :

e3

ECCN Code :

EAR99

Max Power Dissipation :

1.56W