MJD47T4
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- Mfr.Part #
- MJD47T4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 250V 1A DPAK
- Stock
- 1,888
- In Stock ：
- 1,888
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 300mA 10V
- Height :
- 2.4mm
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 15W
- Emitter Base Voltage (VEBO) :
- 5V
- Max Breakdown Voltage :
- 250V
- Transistor Type :
- NPN
- Frequency :
- 10MHz
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 200mA, 1A
- Factory Lead Time :
- 8 Weeks
- Voltage - Rated DC :
- 250V
- hFE Min :
- 30
- Collector Emitter Voltage (VCEO) :
- 250V
- Width :
- 6.2mm
- Transition Frequency :
- 10MHz
- Polarity/Channel Type :
- NPN
- Terminal Finish :
- Matte Tin (Sn)
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Current Rating :
- 1A
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 350V
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- 1V
- JEDEC-95 Code :
- TO-252AA
- Mount :
- Surface Mount
- Max Collector Current :
- 1A
- Number of Terminations :
- 2
- Transistor Application :
- SWITCHING
- Length :
- 6.6mm
- Current - Collector Cutoff (Max) :
- 100μA
- Gain Bandwidth Product :
- 10MHz
- Terminal Form :
- Gull wing
- Case Connection :
- COLLECTOR
- Max Power Dissipation :
- 15W
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 4.535924g
- Collector Emitter Breakdown Voltage :
- 250V
- JESD-30 Code :
- R-PSSO-G2
- Peak Reflow Temperature (Cel) :
- 260
- VCEsat-Max :
- 1 V
- Base Part Number :
- MJD47
- Pin Count :
- 3
- Number of Elements :
- 1
- Datasheets
- MJD47T4
MJD47T4 Documents
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NPN 150°C TJ 100μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD47T4 Overview
In this device, the DC current gain is 30 @ 300mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 200mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 10MHz.Input voltage breakdown is available at 250V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
MJD47T4 Features
the DC current gain for this device is 30 @ 300mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 10MHz
MJD47T4 Applications
There are a lot of STMicroelectronics
MJD47T4 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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