MJD47T4
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- Mfr.Part #
- MJD47T4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 250V 1A DPAK
- Stock
- 1,888
- In Stock ：
- 1,888
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 15W
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Base Part Number :
- MJD47
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Current Rating :
- 1A
- VCEsat-Max :
- 1 V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Transistor Application :
- SWITCHING
- Frequency :
- 10MHz
- Height :
- 2.4mm
- Power Dissipation :
- 15W
- hFE Min :
- 30
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 2
- Transition Frequency :
- 10MHz
- Terminal Finish :
- Matte Tin (Sn)
- Collector Emitter Saturation Voltage :
- 1V
- Pin Count :
- 3
- Terminal Form :
- Gull wing
- Weight :
- 4.535924g
- Max Collector Current :
- 1A
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 200mA, 1A
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- Voltage - Rated DC :
- 250V
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 300mA 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 250V
- Factory Lead Time :
- 8 Weeks
- Case Connection :
- COLLECTOR
- Max Breakdown Voltage :
- 250V
- Polarity/Channel Type :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- NPN
- Collector Base Voltage (VCBO) :
- 350V
- Collector Emitter Breakdown Voltage :
- 250V
- JEDEC-95 Code :
- TO-252AA
- JESD-609 Code :
- e3
- JESD-30 Code :
- R-PSSO-G2
- Gain Bandwidth Product :
- 10MHz
- Length :
- 6.6mm
- Current - Collector Cutoff (Max) :
- 100μA
- Width :
- 6.2mm
- Operating Temperature :
- 150°C TJ
- Datasheets
- MJD47T4
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NPN 150°C TJ 100μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD47T4 Overview
In this device, the DC current gain is 30 @ 300mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 200mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 10MHz.Input voltage breakdown is available at 250V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
MJD47T4 Features
the DC current gain for this device is 30 @ 300mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 10MHz
MJD47T4 Applications
There are a lot of STMicroelectronics
MJD47T4 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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