MJD47T4

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Radiation Hardening :

No

Transition Frequency :

10MHz

Time@Peak Reflow Temperature-Max (s) :

30

Operating Temperature :

150°C TJ

Vce Saturation (Max) @ Ib, Ic :

1V @ 200mA, 1A

Height :

2.4mm

hFE Min :

30

Current Rating :

1A

Packaging :

Tape and Reel (TR)

JEDEC-95 Code :

TO-252AA

Max Power Dissipation :

15W

VCEsat-Max :

1 V

Current - Collector Cutoff (Max) :

100μA

Terminal Form :

Gull wing

Width :

6.2mm

Frequency :

10MHz

Pin Count :

3

Collector Base Voltage (VCBO) :

350V

Transistor Element Material :

SILICON

Case Connection :

COLLECTOR

REACH SVHC :

No SVHC

Polarity/Channel Type :

NPN

Mounting Type :

Surface Mount

Voltage - Rated DC :

250V

Number of Elements :

1

Collector Emitter Saturation Voltage :

1V

Number of Pins :

3

Lead Free :

Lead Free

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PSSO-G2

Power Dissipation :

15W

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 300mA 10V

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

250V

Mount :

Surface Mount

Weight :

4.535924g

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Transistor Type :

NPN

Emitter Base Voltage (VEBO) :

5V

Number of Terminations :

2

Terminal Finish :

Matte Tin (Sn)

Length :

6.6mm

Factory Lead Time :

8 Weeks

Base Part Number :

MJD47

Max Collector Current :

1A

Collector Emitter Voltage (VCEO) :

250V

Gain Bandwidth Product :

10MHz

Max Breakdown Voltage :

250V