MJD47G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Packaging :

Tube

Length :

6.73mm

Current - Collector Cutoff (Max) :

200μA

Number of Pins :

3

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Transistor Type :

NPN

Height :

2.38mm

Radiation Hardening :

No

Case Connection :

COLLECTOR

Voltage - Rated DC :

250V

Element Configuration :

Single

JESD-30 Code :

R-PSSO-G2

Time@Peak Reflow Temperature-Max (s) :

40

Width :

6.22mm

Operating Temperature :

-65°C~150°C TJ

Gain Bandwidth Product :

10MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

1.56W

Terminal Form :

Gull wing

Number of Elements :

1

Power Dissipation :

1.56W

Surface Mount :

yes

Pin Count :

3

Polarity/Channel Type :

NPN

Factory Lead Time :

8 Weeks

Weight :

4.535924g

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

1V @ 200mA, 1A

RoHS Status :

ROHS3 Compliant

Published :

2006

Transition Frequency :

10MHz

Terminal Finish :

Tin (Sn)

Number of Terminations :

2

hFE Min :

30

Current Rating :

1A

Base Part Number :

MJD47

Collector Emitter Voltage (VCEO) :

250V

Max Collector Current :

1A

Frequency :

10MHz

Collector Emitter Breakdown Voltage :

250V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Pbfree Code :

yes

Collector Base Voltage (VCBO) :

350V

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 300mA 10V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Emitter Base Voltage (VEBO) :

5V

Collector Emitter Saturation Voltage :

1V

Mounting Type :

Surface Mount