MJD45H11TM
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- Mfr.Part #
- MJD45H11TM
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 80V 8A TO252-3
- Stock
- 8,324
- In Stock ：
- 8,324
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-30 Code :
- R-PSSO-G2
- REACH SVHC :
- No SVHC
- Terminal Finish :
- Tin (Sn)
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- -80V
- Max Power Dissipation :
- 1.75W
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 8A
- Frequency :
- 40MHz
- Gain Bandwidth Product :
- 40MHz
- Voltage - Rated DC :
- -80V
- Operating Temperature :
- 150°C TJ
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 6 days ago)
- Terminal Form :
- Gull wing
- Weight :
- 260.37mg
- Polarity :
- PNP, NPN
- Max Collector Current :
- 8A
- Packaging :
- Tape and Reel (TR)
- Current Rating :
- -8A
- Pbfree Code :
- yes
- Mount :
- Surface Mount
- hFE Min :
- 60
- Collector Emitter Voltage (VCEO) :
- 80V
- Published :
- 2015
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 1.75W
- Number of Terminations :
- 2
- Transistor Type :
- PNP
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 80V
- Base Part Number :
- MJD45H11
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Factory Lead Time :
- 15 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 4A 1V
- Lead Free :
- Lead Free
- Max Breakdown Voltage :
- 80V
- Current - Collector Cutoff (Max) :
- 10μA
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- -1V
- Emitter Base Voltage (VEBO) :
- -5V
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Transition Frequency :
- 40MHz
- Datasheets
- MJD45H11TM
PNP 150°C TJ 10μA 1 Elements 2 Terminations SILICON TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD45H11TM Overview
In this device, the DC current gain is 40 @ 4A 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 400mA, 8A.With the emitter base voltage set at -5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -8A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 40MHz.Input voltage breakdown is available at 80V volts.Single BJT transistor is possible for the collector current to fall as low as 8A volts at Single BJT transistors maximum.
MJD45H11TM Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at -5V
the current rating of this device is -8A
a transition frequency of 40MHz
MJD45H11TM Applications
There are a lot of ON Semiconductor
MJD45H11TM applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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