MJD45H11RLG

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Mfr.Part #
MJD45H11RLG
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRANS PNP 80V 8A DPAK
Stock
28,393
In Stock :
28,393

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Current Rating :
-8A
Emitter Base Voltage (VEBO) :
5V
Transistor Type :
PNP
Frequency :
90MHz
Time@Peak Reflow Temperature-Max (s) :
40
Pin Count :
3
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Power Dissipation :
1.75W
RoHS Status :
ROHS3 Compliant
Transistor Application :
SWITCHING
REACH SVHC :
No SVHC
Max Power Dissipation :
20W
Gain Bandwidth Product :
90MHz
Number of Pins :
3
Max Collector Current :
8A
JESD-30 Code :
R-PSSO-G2
Length :
6.73mm
Element Configuration :
Single
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
hFE Min :
60
Number of Terminations :
2
Collector Emitter Voltage (VCEO) :
80V
Polarity/Channel Type :
PNP
ECCN Code :
EAR99
Radiation Hardening :
No
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
Published :
2005
Transistor Element Material :
SILICON
Mounting Type :
Surface Mount
Peak Reflow Temperature (Cel) :
260
Contact Plating :
Tin
Collector Emitter Saturation Voltage :
1V
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 4A 1V
Base Part Number :
MJD45H11
Terminal Form :
Gull wing
Halogen Free :
Halogen Free
Vce Saturation (Max) @ Ib, Ic :
1V @ 400mA, 8A
Lead Free :
Lead Free
Packaging :
Tape and Reel (TR)
Pbfree Code :
yes
Collector Base Voltage (VCBO) :
5V
Operating Temperature :
-55°C~150°C TJ
Voltage - Rated DC :
-80V
Case Connection :
COLLECTOR
Max Breakdown Voltage :
80V
Collector Emitter Breakdown Voltage :
80V
JESD-609 Code :
e3
Height :
2.38mm
Factory Lead Time :
8 Weeks
Transition Frequency :
90MHz
Surface Mount :
yes
Current - Collector Cutoff (Max) :
1μA
Width :
6.22mm
Datasheets
MJD45H11RLG
Introducing Transistors - Bipolar (BJT) - Single onsemi MJD45H11RLG from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Terminations:2, Mounting Type:Surface Mount, Base Part Number:MJD45H11, Operating Temperature:-55°C~150°C TJ, MJD45H11RLG pinout, MJD45H11RLG datasheet PDF, MJD45H11RLG amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJD45H11RLG ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJD45H11RLG


PNP -55°C~150°C TJ 1μA 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount

MJD45H11RLG Overview


This device has a DC current gain of 40 @ 4A 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -8A.In this part, there is a transition frequency of 90MHz.As a result, it can handle voltages as low as 80V volts.The maximum collector current is 8A volts.

MJD45H11RLG Features


the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is -8A
a transition frequency of 90MHz


MJD45H11RLG Applications


There are a lot of ON Semiconductor
MJD45H11RLG applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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