MJD45H11J
- Mfr.Part #
- MJD45H11J
- Manufacturer
- Nexperia
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 80V 8A DPAK
- Stock
- 13,926
- In Stock :
- 13,926
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency - Transition :
- 80MHz
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 2A 1V
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- Factory Lead Time :
- 16 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 8A
- Transistor Type :
- PNP
- Current - Collector Cutoff (Max) :
- 1μA
- Current - Collector (Ic) (Max) :
- 8A
- Power - Max :
- 1.75W
- Packaging :
- Tape and Reel (TR)
- Datasheets
- MJD45H11J

PNP 150°C TJ 1μA TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD45H11J Overview
This device has a DC current gain of 60 @ 2A 1V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Detection of Collector Emitter Breakdown at 80V maximal voltage is present.
MJD45H11J Features
the DC current gain for this device is 60 @ 2A 1V
the vce saturation(Max) is 1V @ 400mA, 8A
MJD45H11J Applications
There are a lot of Nexperia USA Inc.
MJD45H11J applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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