MJD45H11G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Voltage (VCEO) :

80V

REACH SVHC :

No SVHC

Current - Collector Cutoff (Max) :

1μA

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Halogen Free :

Halogen Free

Base Part Number :

MJD45H11

Collector Emitter Breakdown Voltage :

80V

Frequency :

90MHz

Time@Peak Reflow Temperature-Max (s) :

40

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 4A 1V

Transistor Type :

PNP

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Saturation Voltage :

1V

JESD-30 Code :

R-PSSO-G2

Factory Lead Time :

22 Weeks

Transistor Element Material :

SILICON

Height :

2.38mm

Width :

6.22mm

Collector Base Voltage (VCBO) :

5V

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Number of Pins :

3

Packaging :

Tube

Number of Terminations :

2

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Polarity/Channel Type :

PNP

Voltage - Rated DC :

-80V

Surface Mount :

yes

Max Collector Current :

8A

ECCN Code :

EAR99

Case Connection :

COLLECTOR

Current Rating :

-8A

Gain Bandwidth Product :

90MHz

Transistor Application :

SWITCHING

Pbfree Code :

yes

Lead Free :

Lead Free

Power Dissipation :

1.75W

Pin Count :

3

Published :

2002

Emitter Base Voltage (VEBO) :

5V

Max Power Dissipation :

1.75W

Contact Plating :

Tin

Operating Temperature :

-55°C~150°C TJ

Vce Saturation (Max) @ Ib, Ic :

1V @ 400mA, 8A

Radiation Hardening :

No

Transition Frequency :

90MHz

Length :

6.73mm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

hFE Min :

60

Lifecycle Status :

ACTIVE (Last Updated: 19 hours ago)